| PART |
Description |
Maker |
| CMDD7006 |
SMD Switching Diode Single: High Voltage
SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| CMPD2005S |
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SMD Switching Diode Dual: High Voltage: In Series
|
Central Semiconductor, Corp.
Central Semiconductor Corp
|
| 1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| BAS21HT1G |
High Voltage Switching Diode 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
ON Semiconductor
|
| CPD80 |
Switch Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
| KTX403U |
EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 2SC3376 E000838 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
From old datasheet system
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| BAS40-07W BAS4007W |
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM900DB-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| 1SS399 |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| BAS521WT |
High Voltage Switching Diode
|
SEMTECH ELECTRONICS
|
